IPD80R2K8CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

15ns

Turn On Delay Time :

25 ns

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Power Dissipation-Max :

42W Tc

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Factory Lead Time :

18 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Number of Pins :

3

Fall Time (Typ) :

18 ns

Vgs (Max) :

±20V

Mount :

Surface Mount

Input Capacitance :

290pF

Max Dual Supply Voltage :

800V

Mounting Type :

Surface Mount

Supplier Device Package :

PG-TO252-3

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2.8Ohm @ 1.1A, 10V

Drain to Source Voltage (Vdss) :

800V

Weight :

3.949996g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Drain to Source Resistance :

2.4Ohm

Turn-Off Delay Time :

72 ns

FET Type :

N-Channel

Rds On Max :

2.8 Ω

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Published :

2008

Series :

CoolMOS™ CE

Continuous Drain Current (ID) :

1.9A