IPD80R2K7C3AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

2.7Ohm

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Published :

2005

Operating Temperature (Min) :

-40°C

Pulsed Drain Current-Max (IDM) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

800V

Reference Standard :

AEC-Q101

Terminal Position :

Single

JEDEC-95 Code :

TO-252

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

2A

Avalanche Energy Rating (Eas) :

90 mJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant