IPD80R2K4P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

5.3A

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 40μA

ECCN Code :

EAR99

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

DS Breakdown Voltage-Min :

800V

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

22W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 800mA, 10V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

4 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

CoolMOS™ P7

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 500V

Transistor Element Material :

SILICON