IPA65R400CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

650V

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drain-source On Resistance-Max :

0.4Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Published :

1999

ECCN Code :

EAR99

Mounting Type :

Through Hole

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 320µA

JESD-609 Code :

e3

Case Connection :

Isolated

Series :

CoolMOS™

FET Feature :

Super Junction

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.2A, 10V

Power Dissipation-Max :

31W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

215 mJ

Terminal Position :

Single

Factory Lead Time :

18 Weeks

JEDEC-95 Code :

TO-220AB