IPA60R060P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

159 mJ

Power Dissipation-Max :

29W Tc

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.06Ohm

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Packaging :

Tube

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

Not Applicable

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 800μA

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Series :

CoolMOS™ P7

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

151A