IPA60R099C7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Rds On (Max) @ Id, Vgs :

99m Ω @ 9.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1819pF @ 400V

Published :

2015

Power Dissipation-Max :

33W Tc

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.099Ohm

Number of Terminations :

3

Continuous Drain Current (ID) :

12A

Max Dual Supply Voltage :

600V

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™ C7

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

83A

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 490μA

Terminal Position :

Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Elements :

1

Factory Lead Time :

18 Weeks

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

97 mJ

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE