IPA60R099C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Number of Elements :

1

Avalanche Energy Rating (Eas) :

796 mJ

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

35W

Rise Time :

12ns

Drain-source On Resistance-Max :

0.099Ohm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

119nC @ 10V

Terminal Position :

Single

Mounting Type :

Through Hole

Max Dual Supply Voltage :

600V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Lead Free :

Lead Free

Turn-Off Delay Time :

75 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Halogen Free :

Halogen Free

Turn On Delay Time :

15 ns

Pbfree Code :

yes

Published :

2008

Transistor Element Material :

SILICON

Pin Count :

3

FET Type :

N-Channel

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Power Dissipation-Max :

35W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

6 ns

Rds On (Max) @ Id, Vgs :

99m Ω @ 18.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 100V

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3.5V @ 1.21mA

Continuous Drain Current (ID) :

37.9A

Current - Continuous Drain (Id) @ 25°C :

37.9A Tc

Packaging :

Tube