IPA60R060C7XKSA1
- Mfr.Part #
- IPA60R060C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A TO220
- Stock
- 21,033
- In Stock :
- 21,033
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Max Dual Supply Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 34W Tc
- Factory Lead Time :
- 18 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2850pF @ 400V
- Pulsed Drain Current-Max (IDM) :
- 135A
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.06Ohm
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 15.9A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 800μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 159 mJ
- Series :
- CoolMOS™ C7
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 16A
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Datasheets
- IPA60R060C7XKSA1

N-Channel Tube 60m Ω @ 15.9A, 10V ±20V 2850pF @ 400V 68nC @ 10V TO-220-3 Full Pack
IPA60R060C7XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 159 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2850pF @ 400V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 135A.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA60R060C7XKSA1 Features
the avalanche energy rating (Eas) is 159 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 135A.
IPA60R060C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R060C7XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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