IPA60R125C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Radiation Hardening :

No

Continuous Drain Current (ID) :

30A

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

3.5V @ 960μA

Turn On Delay Time :

15 ns

Series :

CoolMOS™

Pulsed Drain Current-Max (IDM) :

89A

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

600V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Through Hole

JESD-609 Code :

e3

Pbfree Code :

yes

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Factory Lead Time :

12 Weeks

Halogen Free :

Halogen Free

Power Dissipation-Max :

34W Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

125m Ω @ 14.5A, 10V

Turn-Off Delay Time :

83 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2127pF @ 100V

Pin Count :

3

Rise Time :

12ns

Power Dissipation :

34W

Packaging :

Tube

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free