IPA60R099P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.099Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 530μA

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Rds On (Max) @ Id, Vgs :

99m Ω @ 10.5A, 10V

Series :

CoolMOS™ P7

Pulsed Drain Current-Max (IDM) :

100A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1952pF @ 400V

Case Connection :

Isolated

Terminal Position :

Single

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

105 mJ

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

29W Tc

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Surface Mount :

No

Published :

2014

Number of Terminations :

3

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED