IPA60R120C7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Continuous Drain Current (ID) :

11A

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 390μA

Rds On (Max) @ Id, Vgs :

120m Ω @ 7.8A, 10V

Avalanche Energy Rating (Eas) :

78 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.12Ohm

Series :

CoolMOS™ C7

Case Connection :

Isolated

Published :

2008

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

18 Weeks

Mount :

Through Hole

Max Dual Supply Voltage :

600V

FET Type :

N-Channel

Power Dissipation-Max :

32W Tc

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 400V

Pulsed Drain Current-Max (IDM) :

66A

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE