IPA65R1K5CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

5.2A

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Packaging :

Tube

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

18 Weeks

Published :

2013

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1A, 10V

FET Feature :

Super Junction

Avalanche Energy Rating (Eas) :

26 mJ

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 100V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.5V @ 130μA

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power Dissipation-Max :

30W Tc

Max Dual Supply Voltage :

650V

Pulsed Drain Current-Max (IDM) :

8.3A

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Terminal Position :

Single