IPA65R1K0CEXKSA1
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- Mfr.Part #
- IPA65R1K0CEXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7.2A TO220
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Case Connection :
- Isolated
- Factory Lead Time :
- 18 Weeks
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 200µA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 1Ohm
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 68W Tc
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 1.5A, 10V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 7.2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- CoolMOS™
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- Super Junction
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 650V
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 328pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 15.3nC @ 10V
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2016
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 12A
- Datasheets
- IPA65R1K0CEXKSA1
N-Channel Tube 1 Ω @ 1.5A, 10V ±20V 328pF @ 100V 15.3nC @ 10V TO-220-3 Full Pack
IPA65R1K0CEXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 328pF @ 100V.This device conducts a continuous drain current (ID) of 7.2A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 12A.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA65R1K0CEXKSA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 7.2A
based on its rated peak drain current 12A.
IPA65R1K0CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R1K0CEXKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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