IPA65R110CFDXKSA1
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- Mfr.Part #
- IPA65R110CFDXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 31.2A TO220
- Stock
- 20
- In Stock ：
- 20
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 31.2A
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Number of Terminations :
- 3
- Surface Mount :
- No
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 68 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 650V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 18 Weeks
- Pulsed Drain Current-Max (IDM) :
- 99.6A
- Power Dissipation-Max :
- 34.7W Tc
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Rise Time :
- 11ns
- Current - Continuous Drain (Id) @ 25°C :
- 31.2A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240pF @ 100V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Fall Time (Typ) :
- 6 ns
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Drain-source On Resistance-Max :
- 0.11Ohm
- Drain to Source Breakdown Voltage :
- 700V
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.7A, 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.3mA
- Datasheets
- IPA65R110CFDXKSA1
N-Channel Tube 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V 650V TO-220-3 Full Pack
IPA65R110CFDXKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 845 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3240pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31.2A amps.In this device, the drain-source breakdown voltage is 700V and VGS=700V, so the drain-source breakdown voltage is 700V in this case.It is [68 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 99.6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA65R110CFDXKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 99.6A.
a 650V drain to source voltage (Vdss)
IPA65R110CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R110CFDXKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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