IPA65R065C7XKSA1
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- Mfr.Part #
- IPA65R065C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A TO220-FP
- Stock
- 486
- In Stock ：
- 486
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Rise Time :
- 14ns
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.065Ohm
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 18 Weeks
- Fall Time (Typ) :
- 7 ns
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Power Dissipation-Max :
- 34W Tc
- Case Connection :
- Isolated
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 72 ns
- Continuous Drain Current (ID) :
- 15A
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Max Dual Supply Voltage :
- 650V
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 850μA
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Turn On Delay Time :
- 17 ns
- Series :
- CoolMOS™ C7
- Published :
- 2005
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 145A
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 19A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 171 mJ
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3020pF @ 400V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 17.1A, 10V
- Datasheets
- IPA65R065C7XKSA1
N-Channel Tube 65m Ω @ 17.1A, 10V ±20V 3020pF @ 400V 64nC @ 10V TO-220-3 Full Pack
IPA65R065C7XKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 171 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3020pF @ 400V.This device has a continuous drain current (ID) of [15A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 19A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 145A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA65R065C7XKSA1 Features
the avalanche energy rating (Eas) is 171 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 72 ns
based on its rated peak drain current 145A.
IPA65R065C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R065C7XKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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