IPA60R650CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.4A, 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.65Ohm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Number of Terminations :

3

Power Dissipation-Max :

28W Tc

Case Connection :

Isolated

Max Dual Supply Voltage :

600V

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Lead Free :

Lead Free

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Packaging :

Tube

Series :

CoolMOS™ CE

Drain to Source Breakdown Voltage :

650V

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Published :

2014

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

11 ns

Rise Time :

8ns

Turn-Off Delay Time :

58 ns

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

7A

Weight :

2.299997g

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V