IPA60R600P7SXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

21W Tc

Series :

CoolMOS™ P7

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 80μA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.6Ohm

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.7A, 10V

Number of Terminations :

3

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

16A

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

17 mJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 400V

Moisture Sensitivity Level (MSL) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Published :

2014

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated