IPA60R600P6XKSA1
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- Mfr.Part #
- IPA60R600P6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.9A TO220-FP
- Stock
- 19,389
- In Stock ：
- 19,389
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 28W Tc
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 4.5V @ 200μA
- Pulsed Drain Current-Max (IDM) :
- 18A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 557pF @ 100V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Series :
- CoolMOS™ P6
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Turn On Delay Time :
- 11 ns
- Continuous Drain Current (ID) :
- 7.3A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Halogen Free :
- Halogen Free
- Rise Time :
- 7ns
- Max Dual Supply Voltage :
- 600V
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 2.4A, 10V
- Drain-source On Resistance-Max :
- 0.6Ohm
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 33 ns
- Fall Time (Typ) :
- 14 ns
- Packaging :
- Tube
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- IPA60R600P6XKSA1
N-Channel Tube 600m Ω @ 2.4A, 10V ±20V 557pF @ 100V 12nC @ 10V TO-220-3 Full Pack
IPA60R600P6XKSA1 Overview
A device's maximal input capacitance is 557pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.3A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 18A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 600V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPA60R600P6XKSA1 Features
a continuous drain current (ID) of 7.3A
the turn-off delay time is 33 ns
based on its rated peak drain current 18A.
IPA60R600P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R600P6XKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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