IPA60R400CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

JESD-609 Code :

e3

Mount :

Through Hole

Turn-Off Delay Time :

56 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™ CE

Rise Time :

9ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

Number of Terminations :

3

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.4Ohm

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.8A, 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

11 ns

Pbfree Code :

yes

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Continuous Drain Current (ID) :

10.3A

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

31W Tc

Operating Temperature :

-40°C~150°C TJ

Published :

2008

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

600V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

600V

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Number of Channels :

1

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 300μA

Transistor Element Material :

SILICON

Packaging :

Tube