IPA60R250CPXKSA1
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- Mfr.Part #
- IPA60R250CPXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A TO220-FP
- Stock
- 9,733
- In Stock ：
- 9,733
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 40 ns
- Number of Terminations :
- 3
- Published :
- 2008
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 100V
- Drain-source On Resistance-Max :
- 0.25Ohm
- Mount :
- Through Hole
- Max Dual Supply Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Pulsed Drain Current-Max (IDM) :
- 40A
- Qualification Status :
- Not Qualified
- Rise Time :
- 17ns
- Power Dissipation-Max :
- 33W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 12A
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 7.8A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Series :
- CoolMOS™
- Drain to Source Voltage (Vdss) :
- 650V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- Pin Count :
- 3
- Turn-Off Delay Time :
- 110 ns
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 33W
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Packaging :
- Tube
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Datasheets
- IPA60R250CPXKSA1
N-Channel Tube 250m Ω @ 7.8A, 10V ±20V 1300pF @ 100V 35nC @ 10V 650V TO-220-3 Full Pack
IPA60R250CPXKSA1 Overview
A device's maximum input capacitance is 1300pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 600V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPA60R250CPXKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 110 ns
based on its rated peak drain current 40A.
a 650V drain to source voltage (Vdss)
IPA60R250CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R250CPXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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