IPA60R230P6XKSA1
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- Mfr.Part #
- IPA60R230P6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16.8A TO220-FP
- Stock
- 167,241
- In Stock ：
- 167,241
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Rds On Max :
- 230 mΩ
- Drain to Source Voltage (Vdss) :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Supplier Device Package :
- PG-TO220-FP
- Input Capacitance (Ciss) (Max) @ Vds :
- 1450pF @ 100V
- Number of Channels :
- 1
- Published :
- 2008
- Rds On (Max) @ Id, Vgs :
- 230mOhm @ 6.4A, 10V
- Max Dual Supply Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 16.8A Tc
- Packaging :
- Tube
- Series :
- CoolMOS™ P6
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Drain to Source Resistance :
- 207mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.000006g
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 38 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 530μA
- Turn On Delay Time :
- 12 ns
- Power Dissipation-Max :
- 33W Tc
- Package / Case :
- TO-220-3 Full Pack
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 16.8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Rise Time :
- 7ns
- Input Capacitance :
- 1.45nF
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 6 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPA60R230P6XKSA1
N-Channel Tube 230mOhm @ 6.4A, 10V ±20V 1450pF @ 100V 31nC @ 10V 600V TO-220-3 Full Pack
IPA60R230P6XKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1450pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16.8A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 207mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA60R230P6XKSA1 Features
a continuous drain current (ID) of 16.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 207mOhm
a 600V drain to source voltage (Vdss)
IPA60R230P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R230P6XKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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