IPA60R190E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Published :

2008

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

418 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.5V @ 630μA

Mounting Type :

Through Hole

Case Connection :

Isolated

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Drain-source On Resistance-Max :

0.19Ohm

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Series :

CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

59A

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Power Dissipation-Max :

34W Tc

Packaging :

Tube

Pin Count :

3

Qualification Status :

Not Qualified