IPA60R190C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Height :

9.45mm

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Drain-source On Resistance-Max :

0.19Ohm

Packaging :

Tube

Transistor Application :

SWITCHING

Width :

4.57mm

Operating Mode :

ENHANCEMENT MODE

Length :

10.36mm

Continuous Drain Current (ID) :

20.2A

Number of Pins :

3

Rise Time :

11ns

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

REACH SVHC :

No SVHC

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

3 V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

110 ns

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Power Dissipation-Max :

34W Tc

Turn On Delay Time :

15 ns

Factory Lead Time :

40 Weeks

Published :

2008

Series :

CoolMOS™

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

59A

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 630μA

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

418 mJ

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

34W

Lead Free :

Lead Free

Pin Count :

3

Element Configuration :

Single

Qualification Status :

Not Qualified

Contact Plating :

Tin

Fall Time (Typ) :

9 ns