IPA60R170CFD7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Published :

2014

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

51A

Series :

CoolMOS™ CFD7

Mounting Type :

Through Hole

Power Dissipation-Max :

26W Tc

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 300µA

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1199pF @ 400V

Vgs (Max) :

±20V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

60 mJ

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.17Ohm

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

170m Ω @ 6A, 10V

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON