IKD04N60RFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Power - Max :

75W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

2.41mm

Input Type :

Standard

Max Collector Current :

6A

Collector Emitter Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Turn Off Time-Nom (toff) :

216 ns

Turn On Time :

18 ns

Width :

6.22mm

Number of Terminations :

2

Published :

2012

Transistor Element Material :

SILICON

Number of Elements :

1

IGBT Type :

Trench

Current - Collector (Ic) (Max) :

8A

Td (on/off) @ 25°C :

12ns/116ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

2.4V

Factory Lead Time :

16 Weeks

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Max Power Dissipation :

30W

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Transistor Application :

POWER CONTROL

Switching Frequency :

-30kHz

Reverse Recovery Time :

34 ns

JESD-609 Code :

e3

Number of Pins :

3

ECCN Code :

EAR99

Length :

6.73mm

Gate Charge :

27nC

Operating Temperature :

-40°C~175°C TJ

Mount :

Surface Mount

Max Breakdown Voltage :

600V

Switching Energy :

60μJ (on), 50μJ (off)

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 4A, 43 Ω, 15V

Series :

TRENCHSTOP™

Current - Collector Pulsed (Icm) :

12A