IKD04N60RATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.1V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Published :

2005

Pbfree Code :

No

Halogen Free :

Halogen Free

Series :

TRENCHSTOP™

Gate-Emitter Voltage-Max :

20V

Power - Max :

75W

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Additional Feature :

LOW CONDUCTION LOSS

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Current - Collector Pulsed (Icm) :

12A

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Switching Energy :

90μJ (on), 150μJ (off)

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Operating Temperature :

-40°C~175°C TJ

Mounting Type :

Surface Mount

Turn Off Time-Nom (toff) :

342 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Gate-Emitter Thr Voltage-Max :

5.7V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

REACH SVHC :

No SVHC

IGBT Type :

Trench Field Stop

Collector Emitter Voltage (VCEO) :

2.1V

Gate Charge :

27nC

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Number of Elements :

1

Max Collector Current :

8A

Reach Compliance Code :

not_compliant

Max Breakdown Voltage :

600V

Turn On Time :

20 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 4A

Mount :

Surface Mount

Pin Count :

3

Reverse Recovery Time :

43 ns

Test Condition :

400V, 4A, 43 Ω, 15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Td (on/off) @ 25°C :

14ns/146ns

Max Power Dissipation :

75W

Qualification Status :

Not Qualified

Input Type :

Standard