IKD04N60RF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate Charge :

27nC

Td (on/off) @ 25°C :

12ns/116ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Gate-Emitter Thr Voltage-Max :

5.7V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

POWER CONTROL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pin Count :

3

Reverse Recovery Time :

34ns

Series :

TrenchStop®

Current - Collector (Ic) (Max) :

8A

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

IGBT Type :

Trench

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Terminal Position :

Single

Number of Terminations :

2

Test Condition :

400V, 4A, 43 Ω, 15V

Turn Off Time-Nom (toff) :

216 ns

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Turn On Time :

18 ns

Mounting Type :

Surface Mount

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

Voltage - Collector Emitter Breakdown (Max) :

600V

Power Dissipation-Max (Abs) :

75W

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

12A

Input Type :

Standard

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Terminal Form :

Gull wing

Power - Max :

75W

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

*KD04N60

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Operating Temperature :

-40°C~175°C TJ

Switching Energy :

110μJ