IKD06N60R

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Published :

2006

Turn On Time :

22 ns

JESD-30 Code :

R-PSSO-G2

Power - Max :

100W

Current - Collector (Ic) (Max) :

12A

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6A

Gate-Emitter Voltage-Max :

20V

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Turn Off Time-Nom (toff) :

335 ns

Current - Collector Pulsed (Icm) :

18A

Packaging :

Cut Tape (CT)

IGBT Type :

Trench

Test Condition :

400V, 6A, 23 Ω, 15V

Transistor Application :

POWER CONTROL

Number of Terminations :

2

Qualification Status :

Not Qualified

Switching Energy :

330µJ

JESD-609 Code :

e3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge :

48nC

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

100W

Series :

TrenchStop®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~175°C TJ

Voltage - Collector Emitter Breakdown (Max) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Terminal Finish :

Tin (Sn)

Pin Count :

3

Td (on/off) @ 25°C :

12ns/127ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

ECCN Code :

EAR99

Reverse Recovery Time :

68ns

Base Part Number :

*KD06N60

Pbfree Code :

No

Gate-Emitter Thr Voltage-Max :

5.7V

Terminal Position :

Single