IKD03N60RF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Published :

2012

Turn On Time :

18 ns

Gate-Emitter Voltage-Max :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge :

17.1nC

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pbfree Code :

yes

Surface Mount :

yes

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 2.5A

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Base Part Number :

*KD03N60

IGBT Type :

Trench

Gate-Emitter Thr Voltage-Max :

5.7V

Switching Energy :

90μJ

Series :

TrenchStop®

Pin Count :

3

Power - Max :

53.6W

Terminal Finish :

Tin (Sn)

Td (on/off) @ 25°C :

10ns/128ns

Transistor Element Material :

SILICON

Input Type :

Standard

Reach Compliance Code :

Compliant

Current - Collector (Ic) (Max) :

5A

Terminal Position :

Single

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Test Condition :

400V, 2.5A, 68 Ω, 15V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Nom (toff) :

265 ns

Current - Collector Pulsed (Icm) :

7.5A

Reverse Recovery Time :

31ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~175°C TJ

Voltage - Collector Emitter Breakdown (Max) :

600V

Power Dissipation-Max (Abs) :

53.6W

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED