FQP7P06
- Mfr.Part #
- FQP7P06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 7A TO220-3
- Stock
- 10,351
- In Stock :
- 10,351
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 7 ns
- Current Rating :
- -7A
- Continuous Drain Current (ID) :
- 7A
- Dual Supply Voltage :
- -60V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 5 Weeks
- Drain to Source Breakdown Voltage :
- -60V
- Resistance :
- 410mOhm
- Turn-Off Delay Time :
- 7.5 ns
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Length :
- 10.1mm
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- -60V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Rds On (Max) @ Id, Vgs :
- 410m Ω @ 3.5A, 10V
- Height :
- 9.4mm
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 7A
- Element Configuration :
- Single
- Power Dissipation :
- 45W
- Series :
- QFET®
- Fall Time (Typ) :
- 25 ns
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 60V
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 28A
- Width :
- 4.7mm
- Nominal Vgs :
- -4 V
- Published :
- 2001
- Weight :
- 1.8g
- Rise Time :
- 50ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 45W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 25V
- FET Type :
- P-Channel
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Threshold Voltage :
- -4V
- Datasheets
- FQP7P06
FQP7P06 Documents

P-Channel Tube 410m Ω @ 3.5A, 10V ±25V 295pF @ 25V 8.2nC @ 10V 60V TO-220-3
FQP7P06 Description
FQP7P06 is a type of P-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQP7P06 Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the TO-220 package
FQP7P06 Applications
-
Switched-mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
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