FQP7N65C
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- Mfr.Part #
- FQP7N65C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A TO220-3
- Stock
- 24,245
- In Stock ：
- 24,245
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 3.5A, 10V
- Vgs (Max) :
- ±30V
- Series :
- QFET®
- Drain to Source Voltage (Vdss) :
- 650V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.245pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Supplier Device Package :
- TO-220-3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 160W Tc
- Datasheets
- FQP7N65C
N-Channel Tube 1.4Ohm @ 3.5A, 10V ±30V 1.245pF @ 25V 36nC @ 10V 650V TO-220-3
FQP7N65C Overview
A device's maximum input capacitance is 1.245pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQP7N65C Features
a 650V drain to source voltage (Vdss)
FQP7N65C Applications
There are a lot of Rochester Electronics, LLC
FQP7N65C applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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