FQP7N60
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- Mfr.Part #
- FQP7N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7.4A TO220-3
- Stock
- 1,197
- In Stock ：
- 1,197
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 142W Tc
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1430pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Tc
- Vgs (Max) :
- ±30V
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.7A, 10V
- Published :
- 2000
- Supplier Device Package :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Packaging :
- Tube
- Datasheets
- FQP7N60
N-Channel Tube 1Ohm @ 3.7A, 10V ±30V 1430pF @ 25V 38nC @ 10V 600V TO-220-3
FQP7N60 Description
The FQP7N60 MOSFET is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
FQP7N60 Features
-
7.4A, 600V, RDS(on) = 1.0Ω(Max.) @VGS = 10 V, ID = 3.7A
-
Low gate charge ( Typ. 29nC)
-
Low Crss ( Typ. 16pF)
-
100% avalanche tested
FQP7N60 Applications
-
Lighting
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