FQP7N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

100ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

26.4A

Power Dissipation-Max :

167W Tc

Number of Elements :

1

JESD-609 Code :

e3

Voltage - Rated DC :

800V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

6.6A

Terminal Finish :

Tin (Sn)

Termination :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Dual Supply Voltage :

800V

ECCN Code :

EAR99

Nominal Vgs :

5 V

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Avalanche Energy Rating (Eas) :

580 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Height :

9.4mm

Turn On Delay Time :

35 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Mount :

Through Hole

Power Dissipation :

167W

Current Rating :

6.6A

Weight :

1.8g

Resistance :

1.5Ohm

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.3A, 10V

Published :

2003

Length :

10.1mm

Threshold Voltage :

5V

Transistor Application :

SWITCHING

Number of Terminations :

3

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

50 ns

Width :

4.7mm

FET Type :

N-Channel