FQP7N40
- Mfr.Part #
- FQP7N40
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 7A TO220-3
- Stock
- 27,389
- In Stock :
- 27,389
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2000
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 800 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 800mOhm
- Fall Time (Typ) :
- 50 ns
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 400V
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- TO-220-3
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 98W
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- QFET®
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 35 ns
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Drain to Source Breakdown Voltage :
- 400V
- Nominal Vgs :
- 5 V
- Current Rating :
- 7A
- Input Capacitance :
- 780pF
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 75ns
- Continuous Drain Current (ID) :
- 7A
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 25V
- Dual Supply Voltage :
- 400V
- Drain to Source Voltage (Vdss) :
- 400V
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Mount :
- Through Hole
- Power Dissipation-Max :
- 98W Tc
- Number of Pins :
- 3
- Datasheets
- FQP7N40

N-Channel Tube 800mOhm @ 3.5A, 10V ±30V 780pF @ 25V 22nC @ 10V 400V TO-220-3
FQP7N40 Overview
A device's maximal input capacitance is 780pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 35 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 800mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQP7N40 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 800mOhm
a 400V drain to source voltage (Vdss)
FQP7N40 Applications
There are a lot of ON Semiconductor
FQP7N40 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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