FQP70N08

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2.7pF @ 25V

Drain Current-Max (Abs) (ID) :

70A

Pulsed Drain Current-Max (IDM) :

280A

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power Dissipation-Max :

155W Tc

Rds On (Max) @ Id, Vgs :

17m Ω @ 35A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.017Ohm

Reach Compliance Code :

Unknown

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1150 mJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Surface Mount :

No

Drain to Source Voltage (Vdss) :

80V

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Number of Terminations :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Position :

Single

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

70A Tc

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

80V