FQP70N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Transistor Application :

SWITCHING

Packaging :

Tube

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2.7pF @ 25V

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

17m Ω @ 35A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

80V

Pulsed Drain Current-Max (IDM) :

280A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±25V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

80V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

1150 mJ

Drain Current-Max (Abs) (ID) :

70A

Current - Continuous Drain (Id) @ 25°C :

70A Tc

JESD-609 Code :

e3

Series :

QFET®

Terminal Position :

Single

Number of Terminations :

3

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Pin Count :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

155W Tc

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.017Ohm

Transistor Element Material :

SILICON