FQP70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

160 ns

Length :

10.1mm

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

QFET®

Height :

9.4mm

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

228A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

30 ns

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Power Dissipation-Max :

160W Tc

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

57A

Factory Lead Time :

15 Weeks

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Current Rating :

57A

Qualification Status :

Not Qualified

Resistance :

23mOhm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Rise Time :

470ns

Published :

2000

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Power Dissipation :

160W

Width :

4.7mm

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

23m Ω @ 28.5A, 10V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

130 ns

Mount :

Through Hole

Voltage - Rated DC :

100V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA