FQP70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Number of Pins :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

100V

Rise Time :

470ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Length :

10.1mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs (Max) :

±25V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Number of Elements :

1

Threshold Voltage :

4V

Weight :

1.8g

Power Dissipation-Max :

160W Tc

Power Dissipation :

160W

REACH SVHC :

No SVHC

Packaging :

Tube

Number of Terminations :

3

Continuous Drain Current (ID) :

57A

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

228A

Current Rating :

57A

Published :

2000

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

23m Ω @ 28.5A, 10V

Resistance :

23mOhm

Turn-Off Delay Time :

130 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Factory Lead Time :

15 Weeks

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Turn On Delay Time :

30 ns

Height :

9.4mm

Fall Time (Typ) :

160 ns

Width :

4.7mm

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)