FQP7N80

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Mfr.Part #
FQP7N80
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 6.6A TO220-3
Stock
6,262
In Stock :
6,262

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Threshold Voltage :
5V
Vgs(th) (Max) @ Id :
5V @ 250μA
Length :
10.1mm
Power Dissipation :
167W
Current Rating :
6.6A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-220AB
Turn-Off Delay Time :
50 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
26.4A
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Pbfree Code :
yes
Resistance :
1.5Ohm
Rise Time :
100ns
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3.3A, 10V
Drain to Source Breakdown Voltage :
800V
ECCN Code :
EAR99
Fall Time (Typ) :
60 ns
Number of Pins :
3
Mounting Type :
Through Hole
Number of Terminations :
3
Published :
2003
Nominal Vgs :
5 V
Termination :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
6.6A Tc
Terminal Finish :
Tin (Sn)
Number of Elements :
1
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
30V
Series :
QFET®
Turn On Delay Time :
35 ns
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
6.6A
Power Dissipation-Max :
167W Tc
Package / Case :
TO-220-3
Factory Lead Time :
4 Weeks
Mount :
Through Hole
Dual Supply Voltage :
800V
REACH SVHC :
No SVHC
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Width :
4.7mm
Voltage - Rated DC :
800V
Operating Temperature :
-55°C~150°C TJ
Weight :
1.8g
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 25V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Avalanche Energy Rating (Eas) :
580 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
Height :
9.4mm
Transistor Element Material :
SILICON
Element Configuration :
Single
Vgs (Max) :
±30V
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP7N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, FQP7N80 pinout, FQP7N80 datasheet PDF, FQP7N80 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP7N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP7N80


N-Channel Tube 1.9 Ω @ 3.3A, 10V ±30V 1680pF @ 25V 35nC @ 10V TO-220-3

FQP7N80C Description


The planar stripe and DMOS technologies developed by Fairchild Semiconductor are used to create the FQP7N80C N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.



FQP7N80C Features


  • Low Crss ( Typ. 10pF)

  • 100% avalanche tested

  • Low gate charge ( Typ. 27nC)

  • 6.6A, 800V, RDS(on) = 1.9Ω(Max.) @VGS = 10 V, ID = 3.3A



FQP7N80C Applications


  • Desktop PC

  • AC-DC Merchant Power Supply - Desktop PC


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