FQD5P20TM
- Mfr.Part #
- FQD5P20TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 3.7A DPAK
- Stock
- 12,194
- In Stock :
- 12,194
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Weight :
- 260.37mg
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Width :
- 6.22mm
- Turn-Off Delay Time :
- 12 ns
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- -200V
- Drain to Source Voltage (Vdss) :
- 200V
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Number of Elements :
- 1
- Voltage - Rated DC :
- -200V
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 70ns
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 3.7A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 2
- Length :
- 6.73mm
- Factory Lead Time :
- 4 Weeks
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Height :
- 2.39mm
- FET Type :
- P-Channel
- Fall Time (Typ) :
- 25 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Current Rating :
- -3.7A
- Power Dissipation :
- 2.5W
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 1.85A, 10V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Tc
- Series :
- QFET®
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 1.4Ohm
- Vgs (Max) :
- ±30V
- Turn On Delay Time :
- 9 ns
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Datasheets
- FQD5P20TM
FQD5P20TM Documents

P-Channel Tape & Reel (TR) 1.4 Ω @ 1.85A, 10V ±30V 430pF @ 25V 13nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
This P-channel enhanced mode power MOSFET is produced using Fairchild's proprietary planar beam and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies. Application of Audio Amplifier DC Motor Control and variable switching Power supply.
FQD5P20TM is a P-channel enhanced mode power MOSFET which is produced using Fairchild's proprietary planar beam and DMOS technology.
FQD5P20TM Features
· -3.7 A, -200 V,RDs(on) = 1.4 Ω (Max.)@ VGs = -10 V,1, =-1.85 A
·Low Gate Charge(Typ.10nC)
· Low Crss( Typ.12 pF)100% Avalanche Tested
· RoHS Compliant
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