FQD5N40TM

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Mfr.Part #
FQD5N40TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 400V 3.4A DPAK
Stock
25,027
In Stock :
25,027

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Pin Count :
3
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
400V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
3.4A Tc
Number of Elements :
1
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
3.4A
Power Dissipation-Max :
2.5W Ta 45W Tc
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 25V
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
1.6 Ω @ 1.7A, 10V
Pulsed Drain Current-Max (IDM) :
13.6A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Terminal Finish :
NOT SPECIFIED
Transistor Element Material :
SILICON
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
290 mJ
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
Unknown
Mounting Type :
Surface Mount
Series :
QFET®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Qualification Status :
COMMERCIAL
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
400V
RoHS Status :
ROHS3 Compliant
Datasheets
FQD5N40TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD5N40TM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FQD5N40TM pinout, FQD5N40TM datasheet PDF, FQD5N40TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD5N40TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD5N40TM


N-Channel Tape & Reel (TR) 1.6 Ω @ 1.7A, 10V ±30V 460pF @ 25V 13nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD5N40TM Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 290 mJ.A device's maximal input capacitance is 460pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 13.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 400V.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FQD5N40TM Features


the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 13.6A.
a 400V drain to source voltage (Vdss)


FQD5N40TM Applications


There are a lot of Rochester Electronics, LLC
FQD5N40TM applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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