FQD5N40TM
- Mfr.Part #
- FQD5N40TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.4A DPAK
- Stock
- 25,027
- In Stock :
- 25,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 400V
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 1.7A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 400V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 3.4A
- Pin Count :
- 3
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Terminal Finish :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Tc
- Pulsed Drain Current-Max (IDM) :
- 13.6A
- Number of Elements :
- 1
- Datasheets
- FQD5N40TM

N-Channel Tape & Reel (TR) 1.6 Ω @ 1.7A, 10V ±30V 460pF @ 25V 13nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N40TM Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 290 mJ.A device's maximal input capacitance is 460pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 13.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 400V.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQD5N40TM Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 13.6A.
a 400V drain to source voltage (Vdss)
FQD5N40TM Applications
There are a lot of Rochester Electronics, LLC
FQD5N40TM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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