FQD5N30TF
- Mfr.Part #
- FQD5N30TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 4.4A DPAK
- Stock
- 6,905
- In Stock :
- 6,905
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 4.4A
- Pulsed Drain Current-Max (IDM) :
- 17.6A
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Series :
- QFET®
- Drain to Source Voltage (Vdss) :
- 300V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 300V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 340 mJ
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Terminal Finish :
- MATTE TIN
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.2A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.9Ohm
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Vgs (Max) :
- ±30V
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQD5N30TF

N-Channel Tape & Reel (TR) 900m Ω @ 2.2A, 10V ±30V 430pF @ 25V 13nC @ 10V 300V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N30TF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 340 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 430pF @ 25V.4.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 17.6A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
FQD5N30TF Features
the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 17.6A.
a 300V drain to source voltage (Vdss)
FQD5N30TF Applications
There are a lot of Rochester Electronics, LLC
FQD5N30TF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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