FQD5N15TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

55 mJ

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.15A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

17.2A

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

4.3A

Transistor Element Material :

SILICON

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Power Dissipation-Max :

2.5W Ta 30W Tc

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.8Ohm

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

150V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

150V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Number of Elements :

1

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Vgs (Max) :

±25V