FQD5N30TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Series :

QFET®

Power Dissipation-Max :

2.5W Ta 45W Tc

Drain to Source Voltage (Vdss) :

300V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Drain Current-Max (Abs) (ID) :

4.4A

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

340 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

DS Breakdown Voltage-Min :

300V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

17.6A

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Pin Count :

3

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.9Ohm

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Terminal Position :

Single

Vgs (Max) :

±30V