FQD5N15TM

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Mfr.Part #
FQD5N15TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 150V 4.3A DPAK
Stock
2,270
In Stock :
2,270

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Terminations :
2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Weight :
260.37mg
Turn-Off Delay Time :
13 ns
Fall Time (Typ) :
25 ns
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
2.5W
Number of Elements :
1
Avalanche Energy Rating (Eas) :
55 mJ
Turn On Delay Time :
5 ns
Rise Time :
45ns
HTS Code :
8541.29.00.95
Series :
QFET®
Element Configuration :
Single
Number of Pins :
3
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
17.2A
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 25V
JESD-609 Code :
e3
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
4.3A Tc
Voltage - Rated DC :
150V
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
4 Weeks
Mounting Type :
Surface Mount
Power Dissipation-Max :
2.5W Ta 30W Tc
Current Rating :
4A
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±25V
Mount :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
4.3A
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
150V
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
800m Ω @ 2.15A, 10V
Drain-source On Resistance-Max :
0.8Ohm
JESD-30 Code :
R-PSSO-G2
Datasheets
FQD5N15TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD5N15TM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FQD5N15TM pinout, FQD5N15TM datasheet PDF, FQD5N15TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD5N15TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD5N15TM


N-Channel Tape & Reel (TR) 800m Ω @ 2.15A, 10V ±25V 230pF @ 25V 7nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD5N15TM Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 55 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 17.2A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.

FQD5N15TM Features


the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 17.2A.


FQD5N15TM Applications


There are a lot of ON Semiconductor
FQD5N15TM applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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