FQD5N20LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

1.25Ohm

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 5V

DS Breakdown Voltage-Min :

200V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Pulsed Drain Current-Max (IDM) :

15.2A

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

60 mJ

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.9A, 10V

Pin Count :

3

Terminal Position :

Single

Series :

QFET®

Surface Mount :

yes

JESD-609 Code :

e3

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Drain Current-Max (Abs) (ID) :

3.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 37W Tc

Pbfree Code :

yes

Transistor Element Material :

SILICON