FQD5N20LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

3.8A

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

200V

Pin Count :

3

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 5V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Terminal Position :

Single

Power Dissipation-Max :

2.5W Ta 37W Tc

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.9A, 10V

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Avalanche Energy Rating (Eas) :

60 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

200V

Pulsed Drain Current-Max (IDM) :

15.2A

Drain-source On Resistance-Max :

1.25Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Vgs (Max) :

±20V