FQD5N20LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Weight :

260.37mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.8A

Terminal Form :

Gull wing

Number of Terminations :

2

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

200V

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Fall Time (Typ) :

50 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 37W Tc

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.9A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

90ns

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

ECCN Code :

EAR99

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Number of Elements :

1

Turn On Delay Time :

9 ns

Case Connection :

DRAIN

Current Rating :

3.8A

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

60 mJ

Transistor Application :

SWITCHING

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn-Off Delay Time :

15 ns

Number of Pins :

3

JESD-609 Code :

e3