FQD5N20LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Case Connection :

DRAIN

Current Rating :

3.8A

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Drain to Source Breakdown Voltage :

200V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

3.8A

Voltage - Rated DC :

200V

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Rise Time :

90ns

FET Type :

N-Channel

Weight :

260.37mg

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.9A, 10V

Element Configuration :

Single

Qualification Status :

Not Qualified

Turn On Delay Time :

9 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 5V

Power Dissipation-Max :

2.5W Ta 37W Tc

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Fall Time (Typ) :

50 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

60 mJ

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V