FQD5N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Current Rating :

5A

Lead Free :

Lead Free

Number of Terminations :

2

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

2.8A

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Weight :

260.37mg

Width :

6.22mm

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

1

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.4A, 10V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Rise Time :

42ns

Length :

6.73mm

Power Dissipation-Max :

2.5W Ta 49W Tc

Turn-Off Delay Time :

38 ns

Case Connection :

DRAIN

Series :

QFET®

Vgs (Max) :

±30V

Voltage - Rated DC :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

JESD-609 Code :

e3

Mount :

Surface Mount

Height :

2.39mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

46 ns

Factory Lead Time :

7 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Resistance :

2.5Ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2