FQD5N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.4A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Voltage - Rated DC :

600V

Rise Time :

42ns

Resistance :

2.5Ohm

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Radiation Hardening :

No

FET Type :

N-Channel

Transistor Element Material :

SILICON

Weight :

260.37mg

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

46 ns

Number of Elements :

1

Turn-Off Delay Time :

38 ns

Factory Lead Time :

7 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Published :

2013

ECCN Code :

EAR99

Length :

6.73mm

Number of Pins :

3

Series :

QFET®

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

Threshold Voltage :

4V

Height :

2.39mm

Continuous Drain Current (ID) :

2.8A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 49W Tc

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Current Rating :

5A

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ