FQD5N50TM

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Mfr.Part #
FQD5N50TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 3.5A DPAK
Stock
11,860
In Stock :
11,860

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id :
5V @ 250μA
Series :
QFET®
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
1.8 Ω @ 1.75A, 10V
Mounting Type :
Surface Mount
Qualification Status :
COMMERCIAL
Surface Mount :
yes
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
3.5A
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
3.5A Tc
Packaging :
Tape and Reel (TR)
Terminal Finish :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
610pF @ 25V
Avalanche Energy Rating (Eas) :
300 mJ
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Transistor Application :
SWITCHING
Terminal Position :
Single
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±30V
Pin Count :
3
Drain to Source Voltage (Vdss) :
500V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
500V
Pulsed Drain Current-Max (IDM) :
14A
Power Dissipation-Max :
2.5W Ta 50W Tc
Number of Terminations :
2
Datasheets
FQD5N50TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD5N50TM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, FQD5N50TM pinout, FQD5N50TM datasheet PDF, FQD5N50TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD5N50TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD5N50TM


N-Channel Tape & Reel (TR) 1.8 Ω @ 1.75A, 10V ±30V 610pF @ 25V 17nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD5N50TM Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 610pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 3.5A.Pulsed drain current is maximum rated peak drain current 14A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQD5N50TM Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 14A.
a 500V drain to source voltage (Vdss)


FQD5N50TM Applications


There are a lot of Rochester Electronics, LLC
FQD5N50TM applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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