FQD5N50CTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Power Dissipation-Max :

2.5W Ta

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Continuous Drain Current (ID) :

4A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Mount :

Surface Mount

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

500V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Number of Elements :

1

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Weight :

260.37mg

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

300 mJ

JESD-609 Code :

e3