FQD5N50CTM
- Mfr.Part #
- FQD5N50CTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4A DPAK
- Stock
- 8,577
- In Stock :
- 8,577
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-252AA
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- FAST SWITCHING
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Power Dissipation-Max :
- 2.5W Ta 48W Tc
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 625pF @ 25V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 500V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 16A
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FQD5N50CTM

N-Channel Tape & Reel (TR) 1.4 Ω @ 2A, 10V ±30V 625pF @ 25V 24nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N50CTM Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 4A.Pulsed drain current is maximum rated peak drain current 16A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQD5N50CTM Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 16A.
a 500V drain to source voltage (Vdss)
FQD5N50CTM Applications
There are a lot of Rochester Electronics, LLC
FQD5N50CTM applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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