FQD5N50CTM

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Mfr.Part #
FQD5N50CTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 4A DPAK
Stock
8,577
In Stock :
8,577

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-252AA
Terminal Finish :
MATTE TIN
Avalanche Energy Rating (Eas) :
300 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
FAST SWITCHING
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Power Dissipation-Max :
2.5W Ta 48W Tc
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Case Connection :
DRAIN
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Drain to Source Voltage (Vdss) :
500V
Transistor Element Material :
SILICON
Terminal Position :
Single
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
500V
Pbfree Code :
yes
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Drain Current-Max (Abs) (ID) :
4A
RoHS Status :
ROHS3 Compliant
Series :
QFET®
Vgs(th) (Max) @ Id :
4V @ 250µA
Pulsed Drain Current-Max (IDM) :
16A
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging :
Tape and Reel (TR)
Datasheets
FQD5N50CTM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD5N50CTM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FQD5N50CTM pinout, FQD5N50CTM datasheet PDF, FQD5N50CTM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD5N50CTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQD5N50CTM


N-Channel Tape & Reel (TR) 1.4 Ω @ 2A, 10V ±30V 625pF @ 25V 24nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD5N50CTM Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 4A.Pulsed drain current is maximum rated peak drain current 16A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQD5N50CTM Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 16A.
a 500V drain to source voltage (Vdss)


FQD5N50CTM Applications


There are a lot of Rochester Electronics, LLC
FQD5N50CTM applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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